31399金沙娱场城[中国]精粹研究院|官网

BLQ3N100E, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET
technology which reduce the conduction loss, improve switching performance, and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

• BLQ3N100E-Spec-Rev 1.0-2022.pdf

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