31399金沙娱场城[中国]精粹研究院|官网

• BLG50T65FDLA_V4.0_en.pdf

  （Documentation）

  ALL

• Fast Switching
• Low VCE(sat)
• Positive temperature coefficient
• Fast recovery anti-parallel diode
• RoHS product

BLG50T65FDLA is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications.