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BLG50T65FDLA

50T65,HV,高压,IGBT

Advantage
  • Fast Switching
  • Low VCE(sat)
  • Positive temperature coefficient
  • Fast recovery anti-parallel diode
  • RoHS product
Introduction

BLG50T65FDLA is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications.

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