31399金沙娱场城[中国]精粹研究院|官网

Home > Product > BLP021N10
BLP021N10

021N10,LV,低压,SGT

Advantage
  • Fast Switching
  • Low On-Resistance
  • Low Gate Charge
  • Low Reverse transfer capacitances
  • High avalanche ruggedness
  • RoHS product
Introduction

BLP021N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications.

Sample Apply