31399金沙娱场城[中国]精粹研究院|官网

• BLP20N10L-D Rev 11.pdf

  （Documentation）

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• BLP20N10L-Q Rev 11.pdf

  （Documentation）

  ALL

• Fast Switching
• Low On-Resistance
• Low Gate Charge
• Low Reverse transfer capacitances
• High avalanche ruggedness
• RoHS product

BLP20N10L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications.