31399金沙娱场城[中国]精粹研究院|官网

Home > Product > BLP20N10L
BLP20N10L

20N10L,LV,低压,SGT

Advantage
  • Fast Switching
  • Low On-Resistance
  • Low Gate Charge
  • Low Reverse transfer capacitances
  • High avalanche ruggedness
  • RoHS product
Introduction

BLP20N10L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications.

Sample Apply